Semilab is pleased to share two of our papers connected to ICSCRM 2025 are now published and available to read online, addressing key metrology challenges in wide bandgap semiconductor technologies:

Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
Authors: Oleg Rusch, Julien Körfer, Boglárka Dikó, Zsófia Kiss, Attila Sütő, Emeric Balogh

Read the full article here: https://research-metrology.semilab.com/hu/publications/optical-critical-dimension-metrology-for-the-sic-trench-mosfet-process

Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry
Authors: László Makai, Zsombor Pap, Bálint Fodor, Julien Körfer, Mathias Rommel

Read the full article here: https://research-metrology.semilab.com/hu/publications/challenges-in-measuring-thin-sio2-layers-on-4h-sic-via-spectroscopic-ellipsometry

The first paper presents Optical Critical Dimension metrology as a fast, non-destructive approach for monitoring trench structures in SiC MOSFET processing, demonstrating strong sensitivity to geometric variations and good correlation with electron microscopy results.

The second paper examines the key challenges of measuring ultra-thin SiO2  layers on 4H-SiC using spectroscopic ellipsometry, highlighting methods such as microspot measurement, incidence-angle optimization, and backside-reflection modeling to improve thickness sensitivity and reliability.

These results underline the importance of close cooperation between industry and research in advancing metrology for SiC-based devices. The collaboration between Semilab and Fraunhofer IISB brings together complementary expertise and helps translate scientific understanding into practical solutions for emerging semiconductor technologies.