MBD-2300 Model-Based Dimensions

Model-based Dimensions (MBD-2300) is an optical critical dimension (OCD) metrology system designed to characterize the geometric dimensions of periodic trench structures created during lithography, etching, deposition, and related process steps. 

By combining Spectroscopic Ellipsometry (SE) and Spectroscopic Reflectometry (SR), the MBD-2300 provides non-contact measurement of trench and thin-film parameters in a single platform.  

Designed for Advanced Power Semiconductor Processes  

By combining critical-dimension and thin-film metrology, the system helps process engineers monitor trench formation, identify process drift, and improve device-process control in advanced power device processes, like SiC trench and superjunction MOSFET production 

Key Features and Benefits: 

• MBD-2300 is optimized for power device fabs: 

• Combined thin film and critical dimension metrology 

• Pattern recognition 

• Dual-arm robot 

• Dual load port 

• Non-contact, high-precision optical measurement 

• Small footprint, high throughput 

• Diverse range of wafer sizes and materials (Si, SiC, glass) 

• Low cost of ownership 

• Worldwide coverage for service and application support 

Applications: 

Critical dimension characterization: 

• Hard-mask sidewall angle metrology  

• Combined SiC trench depth and remaining hard-mask thickness metrology 

• SiC trench depth, trench shape, gate oxide thickness monitoring 

Optional features: 

• AGV, OHT compatibility 

• Open cassette, SMIF load ports 

• Cassette and wafer ID readers 

• DUV and NIR spectral range extensions 

• Bow/Warp, Global Stress metrology option 

• SECS/GEM communication capability