PSI-2200

PSI-2200 is a Polarized Stress Imager system, designed to inspect and visualize crystal defect-related mechanical stress fields in silicon wafers or slugs for production and R&D applications, and to detect defects generated during epitaxy processes, like epi slips, or pin marks.

Applications:

• Detection of defects generated during epi process
• Detection of crystal defect-related stress fields in as-grown Si wafers

Benefits:

• Non-contact, non-destructive full wafer depolarization imaging in transmission mode
• High-resolution image allows finding localized defects such as dislocations or extended stress fields such as slip lines
• Automatic defect finding
• Ready to handle 150 OR 200 mm samples
• SAM2™ user interface compliant to SEMI® standard (E95-0200)