In the Power and Automotive industries, one of the biggest challenges is ensuring stable implantation parameters and precise control over the implantation process. These challenges are especially critical in the electrification era.

With its outstanding material properties - like high breakdown field and excellent thermal conductivity - silicon carbide (SiC) is becoming a top choice for high-power and high-temperature applications, driving the electrification of the automotive industry.

The Semilab PMR-C system provides real-time monitoring of ion implantation, enabling precise measurements across various materials - including silicon carbide (SiC) and silicon (Si) - even at very low doses and at room temperature. This level of precision allows semiconductor manufacturers to achieve tighter process control, improved yield, and greater confidence in product quality.

Built on 15+ years of application know-how, our Photomodulated Reflectance (PMR) system is recommended for a wide range of ion-implantation metrology tasks. It delivers fast, non-contact, non-destructive insights that fit directly into production: from dose verification and dose range characterization to tilt angle, implant temperature, and annealing quality monitoring.

Key Features:

• Both SiC and Si measurement capability in a single system,

• Compact platform,

• Pattern recognition,

• Sample size 4-8”,

• Worldwide support

Let’s take a closer look at the PMR’s key applications: real-time monitoring of ion implantation in power devices.

Accurate dose control is critical for ensuring device performance and reliability. With PMR-C technology, we can precisely measure ion implantation across all species — including N, Al, P, and As — even at very low doses and at room temperature.

This level of precision provides semiconductor manufacturers in the power industry a tighter process control, improved yield, and greater confidence in device quality.

Another key application is tracking the self-healing of SiC crystals during ion implantation. The PMR signal increases monotonously with crystal defects. Interestingly, when implantation is performed at higher temperatures, the signal decreases—capturing the negative trend predicted by theory without breaking monotony.

Below, we show PMR-C signal vs. implantation temperature for different ion irradiation processes into 4H-SiC at a dose of 1E14/cm².

By picking the right PMR platform, manufacturers can cover a wide range of implantation needs:

• PMR-C: monitors implant dose in both SiC and Si samples on the same platform.

• PMR-S: tailored for Si only, with even higher sensitivity.

If you want to learn more about the capabilities of the PMR product family, read our recent publication titled “Versatile monitoring of ion implantation processes in Si and SiC wafers using the PMR-C technique.”