FAaST 310/210 C-V / I-V

FAaST 310/210 C-V / I-V systems apply Semilab SDI’s advanced C-V / I-V measurements based on patented corona-Kelvin methods to provide non-contact imaging of dielectric and interface properties on monitor wafers. The platforms are suitable for R&D and low-volume manufacturing environments. These models feature:

• Manual wafer loading; including cassette placement station and vacuum wand
• Full wafer NVD inspection and Plasma Damage Monitoring using Surface Voltage FAST Mapping mode
• Automatic programmable sites or contour mapping of dielectric properties including:
  • Dielectric Capacitance (C_D) and Thickness (EOT)
  • Dielectric Leakage Current (I-V)
  • Flatband Voltage (V_fb)
  • Interface Trap Density (D_it)
  • Interface Trapped Charge (Q_it)
  • Semiconductor Surface Barrier (V_sb)
  • Oxide Total Charge (Q_tot), among others
• FAaST software package; including Measurement, Recipe Writing and Data Viewing applications
• Suitable for measurement on: semiconductors (e.g. Si, SiGe, InGaAs, SiC, GaN) with high-k and low-k dielectric films (e.g. SiO₂, SiN_x, Al₂O₃, HfO₂ ; mixed dielectrics and dielectric film stacks)
• Configurable for 50mm to 300mm wafers, with options available to accommodate multiple wafer sizes
• Step Down Power transformer with flexible compatibility
• Additional available options include: Automatic data upload and/or data export, Seismic brackets