Semilab presentation at EU-PVSEC 2021 conference about optimized laser e-PCD measurement for Si ingots
Semilab and co-authors from Longi present the latest achievements of the laser e-PCD measurement technique for the industrial qualification of mono-Si ingots. Since bulk lifetime data is not accessible on as-cut wafer level, the early-phase ingot-level carrier lifetime measurement providing results very close to the bulk lifetime has a crucial importance. Computer simulations and experimental results led to the conclusion that replacing the previous standard 980nm laser source to an 1064nm unit with elevated power is really advantageous in terms of accuracy of the measurement.
The reliability of this upgraded laser e-PCD setup is proven to outperform the competitive flash-lamp based lifetime measuring instruments in the entire carrier lifetime range industrially relevant.
Save your seat for the presentation at https://www.photovoltaic-conference.com/ on 9th September 2021, 18:15!