FAaST 350 C-V / I-V

The FAaST 350 C-V / I-V system applies Semilab SDI’s advanced C-V / I-V measurements based on patented corona-Kelvin methods to non-contact imaging of dielectrics and interface properties. This workhorse platform is designed with automated wafer handling from dual FOUP Loadport loading stations fully capable of supporting in-line measurements in the most demanding high-volume manufacturing environment. 

Features and System specifications:

  • Automatic robotic wafer handling
  • Dual FOUP Loadport; optional configuration with single Loadport or including Versaport
  • Full wafer Non-Visual Defect (NVD) Inspection and Plasma Damage Monitoring using Surface Voltage FAST Mapping mode
  • Automatic programmable sites or contour mapping of dielectric properties including:
    • Dielectric Capacitance (CD) and Thickness (EOT)
    • Dielectric Leakage Current (I-V)
    • Flatband Voltage (Vfb)
    • Interface Trap Density (Dit)
    • Interface Trapped Charge (Qit)
    • Semiconductor Surface Barrier (Vsb)
    • Oxide Total Charge (Qtot)
    • Mobile Ionic Charge (Qm), among others
  • FAaST software package; including Measurement, Recipe Writing and Data Viewing applications
  • Suitable for measurement on: semiconductors (e.g. Si, SiGe, InGaAs, SiC, GaN) with high-k and low-k dielectric films (e.g. SiO2, SiNx, Al2O3, HfO2 ; mixed dielectrics and dielectric film stacks)
  • Default configuration for 300mm wafers; with option for 200mm/300mm bridge configuration
  • Line Conditioner with flexible compatibility
  • Compatible for configuration with other Semilab SDI FAaST tool measurement technologies
  • Additional available options include: Mini-environment, 300mm Semi compliant Automation, Seismic brackets, wafer OCR, RFID, cassette barcode reader, 1000V Vcpd measurement range

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