FAaST 350 C-V / I-V

The FAaST 350 C-V / I-V system applies Semilab SDI’s advanced C-V / I-V measurements based on patented corona-Kelvin methods to non-contact imaging of dielectrics and interface properties. This workhorse platform is designed with automated wafer handling from dual FOUP Loadport loading stations fully capable of supporting in-line measurements in the most demanding high-volume manufacturing environment. 

Features and System specifications:

• Automatic robotic wafer handling
• Dual FOUP Loadport; optional configuration with single Loadport or including Versaport
• Full wafer Non-Visual Defect (NVD) Inspection and Plasma Damage Monitoring using Surface Voltage FAST Mapping mode
• Automatic programmable sites or contour mapping of dielectric properties including:
  • Dielectric Capacitance (C_D) and Thickness (EOT)
  • Dielectric Leakage Current (I-V)
  • Flatband Voltage (V_fb)
  • Interface Trap Density (D_it)
  • Interface Trapped Charge (Q_it)
  • Semiconductor Surface Barrier (V_sb)
  • Oxide Total Charge (Q_tot)
  • Mobile Ionic Charge (Q_m), among others
• FAaST software package; including Measurement, Recipe Writing and Data Viewing applications
• Suitable for measurement on: semiconductors (e.g. Si, SiGe, InGaAs, SiC, GaN) with high-k and low-k dielectric films (e.g. SiO₂, SiN_x, Al₂O₃, HfO₂ ; mixed dielectrics and dielectric film stacks)
• Default configuration for 300mm wafers; with option for 200mm/300mm bridge configuration
• Line Conditioner with flexible compatibility
• Compatible for configuration with other Semilab SDI FAaST tool measurement technologies
• Additional available options include: Mini-environment, 300mm Semi compliant Automation, Seismic brackets, wafer OCR, RFID, cassette barcode reader, 1000V V_cpd measurement range