FAaST 310/210 C-V / I-V

FAaST 310/210 C-V / I-V systems apply Semilab SDI’s advanced C-V / I-V measurements based on patented corona-Kelvin methods to provide non-contact imaging of dielectric and interface properties on monitor wafers. The platforms are suitable for R&D and low-volume manufacturing environments. These models feature:

  • Manual wafer loading; including cassette placement station and vacuum wand
  • Full wafer NVD inspection and Plasma Damage Monitoring using Surface Voltage FAST Mapping mode
  • Automatic programmable sites or contour mapping of dielectric properties including:
    • Dielectric Capacitance (CD) and Thickness (EOT)
    • Dielectric Leakage Current (I-V)
    • Flatband Voltage (Vfb)
    • Interface Trap Density (Dit)
    • Interface Trapped Charge (Qit)
    • Semiconductor Surface Barrier (Vsb)
    • Oxide Total Charge (Qtot), among others
  • FAaST software package; including Measurement, Recipe Writing and Data Viewing applications
  • Suitable for measurement on: semiconductors (e.g. Si, SiGe, InGaAs, SiC, GaN) with high-k and low-k dielectric films (e.g. SiO2, SiNx, Al2O3, HfO2 ; mixed dielectrics and dielectric film stacks)
  • Configurable for 50mm to 300mm wafers, with options available to accommodate multiple wafer sizes
  • Step Down Power transformer with flexible compatibility
  • Additional available options include: Automatic data upload and/or data export, Seismic brackets

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