PV-2000A

Features and System specifications:

It is a new integrated platform with the following capabilities:

• SPV Diffusion Length
  • Discrete ites and mapping of incoming and processed wafers to final cells.
  • UV/Blue SPV ratio for surface passivation (arb. units)
  • Monitorable parameters:
    • Diffusion length (L)
    • Fe contamination (Fe)
    • Other Recomb. Centers (NR)
    • LID Defect Contamination
• Noncontact C-V profiling
  • Time resolved approach with leakage correction
  • Monitorable parameters:
    • Flatband Voltage (V_fb)
    • Oxide Total Charge (Q_tot)
    • Interface Trapped Charge (Q_it)
    • Interface Trap Density (D_it)
    • Dielectric Capacitance (C_D) and thickness (CET),
    • Dielectric Leakage and PID testing 3 to 1000 nm planar and textured films
• Accelerated LID testing
  • Temperature stages (20-220°C), 2 illumination stations (halogen and flash); robotic handling: activates/deactivates iron and/or boron-oxygen
  • LID defects in minutes
  • ALID is sequenced with SPV for Fe and LID defect mapping in short time
  • Applicable to wafers and solar cells
• QSS-μPCD
  • Discrete sites and mapping of incoming and processed wafers
  • PCD laser wavelength: 904 nm
  • Monitorable parameters:
    • Decay lifetime (τ _eff.d)
    • Steady-state lifetime (τ _eff.ss)
    • Injection level (Δn)
    • Effective surface recombination (S_eff)
    • QSS light intensity: 0.005 to 30 Suns
    • Emitter Saturation Current (J0)
    • Implied Voc
• Light Beam Induced Current (LBIC)
  • Mapping of solar cells 1 to 4 lasers
  • Measurement parameters: Current; Diffusion Length; Reflectance; Internal Quantum Efficiency (IQE)
  • Reflectance measurement and IQE mapping

Other testing capabilities:

• SPV Surface Lifetime
• SPV Mapping of Rshunt and Voc
• Noncontact Suns-Voc
• Wafer Thickness Measurement